| Citation: |
Li Wenjun, Cheng Xinhong, Song Zhaorui, Chen Zhanfei, Liu Jun, Sun Lingling. Comparison of Body-Contact and Patterned-SOI LDMOSFETs for RF Wireless Applications[J]. Journal of Semiconductors, 2006, 27(S1): 32-35.
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Li W J, Cheng X H, Song Z R, Chen Z F, Liu J, Sun L L. Comparison of Body-Contact and Patterned-SOI LDMOSFETs for RF Wireless Applications[J]. Chin. J. Semicond., 2006, 27(13): 32.
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Comparison of Body-Contact and Patterned-SOI LDMOSFETs for RF Wireless Applications
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Abstract
A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel is designed and fabricated for RF power amplifier applications.It has good DC and RF characteristics,with no kink effect on the output performance,an off-state breakdown of up to 13V,fT=8GHz at a DC bias of VG=4V and VD=3.6V.These characteristics are better than those of body-contact SOI LDMOSFETs on the same wafer with the same process conditions.-
Keywords:
- body-contact,
- patterned-SOI,
- LDMOSFET,
- RF
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References
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Proportional views
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