Chin. J. Semicond. > 1999, Volume 20 > Issue 7 > 554-558
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Si(100)衬底上部分弛豫外延薄层Ge膜的应变研究

裴成文 , 秦捷 , 刘晓晗 , 胡冬枝 , 张翔九 , 黄大鸣 and 蒋最敏

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    Received: 20 August 2015 Revised: Online: Published: 01 July 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(7): 554-558
      裴成文, 秦捷, 刘晓晗, 胡冬枝, 张翔九, 黄大鸣, 蒋最敏. Si(100)衬底上部分弛豫外延薄层Ge膜的应变研究[J]. 半导体学报(英文版), 1999, 20(7): 554-558.
      Citation:
      裴成文, 秦捷, 刘晓晗, 胡冬枝, 张翔九, 黄大鸣, 蒋最敏. Si(100)衬底上部分弛豫外延薄层Ge膜的应变研究[J]. 半导体学报(英文版), 1999, 20(7): 554-558.
      shu

      • Received Date: 2015-08-20

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