Chin. J. Semicond. > 1999, Volume 20 > Issue 7 > 554-558

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    Received: 20 August 2015 Revised: Online: Published: 01 July 1999

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      裴成文, 秦捷, 刘晓晗, 胡冬枝, 张翔九, 黄大鸣, 蒋最敏. Si(100)衬底上部分弛豫外延薄层Ge膜的应变研究[J]. 半导体学报(英文版), 1999, 20(7): 554-558.
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      裴成文, 秦捷, 刘晓晗, 胡冬枝, 张翔九, 黄大鸣, 蒋最敏. Si(100)衬底上部分弛豫外延薄层Ge膜的应变研究[J]. 半导体学报(英文版), 1999, 20(7): 554-558.

      • Received Date: 2015-08-20

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