| Citation: |
Zhang Kailiang, Song Zhitang, Zhong Min, Zheng Mingjie, Feng Songlin. Double Side Fine CMP of Silicon Wafer[J]. Journal of Semiconductors, 2006, 27(S1): 396-399.
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Zhang K L, Song Z T, Zhong M, Zheng M J, Feng S L. Double Side Fine CMP of Silicon Wafer[J]. Chin. J. Semicond., 2006, 27(13): 396.
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Double Side Fine CMP of Silicon Wafer
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Abstract
Based on the analysis of double side fine CMP process,new type of polishing slurry named SIMIT8030-I was first prepared in order to improve the polishing rate for double side fine CMP, which contained colloidal silica nano-abrasives with large particle.Polishing tests were performed with the double side polisher,and the properties including the size of abrasives,thickness,planarization (TTV and TIR) and roughness were characterized by SEM,wafer thickness measurements ADE-9520,AFM and so on.Results show that comparing with Nalco2350 slurry,polishing rate was increased 40%(14μm/h vs 10μm/h);TTV and TIR were also less than those of Nalco2350 slurry;the RMS of roughness was reduced from 0.4728nm to 0.2874nm.In all,new type of slurry not only increased the removal rate,but also improved the surface planarization and roughness simultaneously.-
Keywords:
- Si wafer,
- double side fine polishing,
- CMP,
- slurry
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References
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Proportional views
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