Citation: |
Cheng Wei, Jin Zhi, Yu Jinyong, Liu Xinyu. Design of InGaAsP Composite Collector for InP DHBT[J]. Journal of Semiconductors, 2007, 28(6): 943-946.
****
Cheng W, Jin Z, Yu J Y, Liu X Y. Design of InGaAsP Composite Collector for InP DHBT[J]. Chin. J. Semicond., 2007, 28(6): 943.
|
Design of InGaAsP Composite Collector for InP DHBT
-
Abstract
A composite collector structure containing InGaAsP was designed,which can effectively eliminate the energy spike at the B-C junction and avoid the current blocking effect.The dependence of the characteristics of a DHBT on the parameters of the collector structure were analyzed theoretically,and an optimized result was delivered which can give a theoretical direction and reference for the design of this kind of composite collector.The data were analyzed based on the theory of this paper,and a satisfactory result was obtained.-
Keywords:
- InP/InGaAs,
- HBT,
- composite collector,
- barrier spike
-
References
-
Proportional views