Chin. J. Semicond. > 2007, Volume 28 > Issue 6 > 947-950
|

PAPERS

Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors

Zhou Jianjun, Jiang Ruolian, Ji Xiaoli, Xie Zili, Han Ping, Zhang Rong and Zheng Youdou

+ Author Affiliations

PDF

Abstract: A 326～365nm AlxGa1-xN/GaN heterojunction pin photodetector is designed.Energy band diagrams of this structure with complete polarization and partial polarization and without polarization are obtained by self-consistent Schrodinger-Poisson calculation.Meanwhile,the photoelectric response spectrum of the photodetector is simulated.Using the energy band diagram and photoelectric response spectrum,the influence of the interface polarization effects on the photoelectric response of the photodetector is analyzed.

Key words: polarization effects, AlGaN/GaN heterojunction, pin photodetector

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3702 Times PDF downloads: 1331 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 26 January 2007 Online: Published: 01 June 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2007  >  28(6): 947-950
      Zhou Jianjun, Jiang Ruolian, Ji Xiaoli, Xie Zili, Han Ping, Zhang Rong, Zheng Youdou. Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors[J]. Journal of Semiconductors, 2007, 28(6): 947-950. ****Zhou J J, Jiang R L, Ji X L, Xie Z L, Han P, Zhang R, Zheng Y D. Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors[J]. Chin. J. Semicond., 2007, 28(6): 947.
      Citation:
      Zhou Jianjun, Jiang Ruolian, Ji Xiaoli, Xie Zili, Han Ping, Zhang Rong, Zheng Youdou. Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors[J]. Journal of Semiconductors, 2007, 28(6): 947-950. ****
      Zhou J J, Jiang R L, Ji X L, Xie Z L, Han P, Zhang R, Zheng Y D. Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors[J]. Chin. J. Semicond., 2007, 28(6): 947.
      shu

      Influence of Interface Polarization Effects on Photoelectric Response of AlGaN/GaN Heterojunction pin Photodetectors

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-02
      • Revised Date: 2007-01-26
      • Published Date: 2007-05-30

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return