Chin. J. Semicond. > 1993, Volume 14 > Issue 5 > 318-321
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Yb、Er双注入SI—InP发光中的浓度猝灭效应和光子雪崩现象研究

曹望和 and 张联苏

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(5): 318-321
      曹望和, 张联苏. Yb、Er双注入SI—InP发光中的浓度猝灭效应和光子雪崩现象研究[J]. 半导体学报(英文版), 1993, 14(5): 318-321.
      Citation:
      曹望和, 张联苏. Yb、Er双注入SI—InP发光中的浓度猝灭效应和光子雪崩现象研究[J]. 半导体学报(英文版), 1993, 14(5): 318-321.
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      • Received Date: 2015-08-20

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