Chin. J. Semicond. > 1993, Volume 14 > Issue 5 > 313-317
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LPCVD氮化硅膜的表面氧化对pH—ISFET特性影响的研究

牛文成

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(5): 313-317
      牛文成. LPCVD氮化硅膜的表面氧化对pH—ISFET特性影响的研究[J]. 半导体学报(英文版), 1993, 14(5): 313-317.
      Citation:
      牛文成. LPCVD氮化硅膜的表面氧化对pH—ISFET特性影响的研究[J]. 半导体学报(英文版), 1993, 14(5): 313-317.
      shu

      • Received Date: 2015-08-20

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