Citation: |
Ren Bingyan, Chu Shijun, Wu Xin, Yu Jianxiu, Sun Xiuju. A Guide System in φ200mm CZ-Si Growth[J]. Journal of Semiconductors, 2008, 29(9): 1790-1793.
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Ren B Y, Chu S J, Wu X, Yu J X, Sun X J. A Guide System in φ200mm CZ-Si Growth[J]. J. Semicond., 2008, 29(9): 1790.
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A Guide System in φ200mm CZ-Si Growth
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Abstract
By modifying the guide system,with the help of the numerical simulation,the argon flow field and the total thermal field are obtained.We find that using the guide shell and the cooling cover improves the argon flow field,the solid-liquid interface,and the temperature gradient.It is good for the emanatory of crystallization latent heat and the improvement of the radical resistivity in the crystal.It also clarifies the mechanism of the improvement of the temperature gradient and the crystallization latent heat emanation velocity by improving the guide system.-
Keywords:
- numerical simulation,
- CZ-Si,
- crystallization latent heat,
- guide shell
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References
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Proportional views