Synthesis of SiC Nanowires via Multiple VS Reactions

Li Jialin; Tang Yuanhong; Li Xiaoxiang; Li Xiaochuan

J. Semicond. > 2008, Volume 29 > Issue 9 > 1786-1789

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Synthesis of SiC Nanowires via Multiple VS Reactions

Li Jialin, Tang Yuanhong, Li Xiaoxiang and Li Xiaochuan

+ Author Affiliations

Abstract: SiC nanowires are successfully synthesized via multiple VS reactions using silicon chips,graphite,and SiO2 powder as raw materials.XRD results identify the product as a cubic β-SiC structure.SEM and TEM images show that the diameter of the SiC nanowires is in the range of 30~50nm and length is up to tens of microns,even over one hundred microns.HRTEM analysis indicates single crystalline β-SiC nanowires with a main growth direction of ［111］.According to a series of experiments,a mechanism of multiple VS reactions is proposed to explain the formation of SiC nanowires.

Key words: SiC nanowires, multiple VS reactions, mechanism

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Li Jialin, Tang Yuanhong, Li Xiaoxiang, Li Xiaochuan. Synthesis of SiC Nanowires via Multiple VS Reactions[J]. Journal of Semiconductors, 2008, 29(9): 1786-1789.

Li J L, Tang Y H, Li X X, Li X C. Synthesis of SiC Nanowires via Multiple VS Reactions[J]. J. Semicond., 2008, 29(9): 1786.

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Received: 18 August 2015 Revised: 07 April 2008 Online: Published: 01 September 2008

SiC nanowires are successfully synthesized via multiple VS reactions using silicon chips,graphite,and SiO2 powder as raw materials.XRD results identify the product as a cubic β-SiC structure.SEM and TEM images show that the diameter of the SiC nanowires is in the range of 30~50nm and length is up to tens of microns,even over one hundred microns.HRTEM analysis indicates single crystalline β-SiC nanowires with a main growth direction of ［111］.According to a series of experiments,a mechanism of multiple VS reactions is proposed to explain the formation of SiC nanowires.

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