| Citation: |
Huang Li, Li Xifeng, Zhang Qun, Miao Weina, Zhang Li, Zhang Zhuangjian, Hua Zhongyi. Preparation of Molybdenum-Doped Indium Oxide Thin Films by Channel Spark Ablation[J]. Journal of Semiconductors, 2005, 26(11): 2133-2138.
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Huang L, Li X F, Zhang Q, Miao W N, Zhang L, Zhang Z J, Hua Z Y. Preparation of Molybdenum-Doped Indium Oxide Thin Films by Channel Spark Ablation[J]. Chin. J. Semicond., 2005, 26(11): 2133.
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Preparation of Molybdenum-Doped Indium Oxide Thin Films by Channel Spark Ablation
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Abstract
Molybdenum-doped indium oxide In2O3∶Mo (IMO) thin films are deposited on common glass substrates by channel spark ablation.The effect of oxygen pressure during the ablation on the optoelectrical properties of the films is studied.For the IMO films deposited at the substrate temperature Ts=350℃,the resistivity changes concavely while the carrier concentration varies convexly with the increase of oxygen pressure.The lowest resistivity and the carrier concentration reach 4.8e-4Ω·cm and 7.1e20cm-3,respectively.The mobility can reach to as high as 49.6cm2／(V·s) .The average transmittance in the visible region is more than 87% for all the samples.The work function of the IMO is 4.6eV measured by ultraviolet photoelectron spectroscopy.The X-ray diffraction diagram indicates that the as-grown IMO films are well crystallized with a preferred orientation of (222).The roughness evaluated by Rrms,Ra, and Rp-v measured by AFM are 0.72,0.44, and 15.4nm,respectively. -
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