| Citation: |
Wu Guibin, Ye Zhizhen, Liu Guojun, Zhao Binghui, Cui Jifeng. UHV/CVD Grown Strain Relaxed SiGe Buffer Layers for Strained Silicon[J]. Journal of Semiconductors, 2005, 26(11): 2139-2142.
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Wu G B, Ye Z Z, Liu G J, Zhao B H, Cui J F. UHV/CVD Grown Strain Relaxed SiGe Buffer Layers for Strained Silicon[J]. Chin. J. Semicond., 2005, 26(11): 2139.
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UHV/CVD Grown Strain Relaxed SiGe Buffer Layers for Strained Silicon
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Abstract
Multi SiGe/Si layers with increasing Ge content are grown using ultra high vacuum chemical vapor deposition.Relaxation and Ge content are investigated with high resolution X-ray diffraction,SIMS,and AFM.By adopting this structure the Ge contents are remarkably improved,and a thin strain-relaxed SiGe buffer layer with high quality,low dislocation density,and smooth morphology is realized.The density of dislocations is calculated to be 1e6cm-2 through optical microscopy.-
Keywords:
- UHV/CVD,
- SiGe,
- buffer layer
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References
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Proportional views
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