The Bipolar Field-Effect Transistor:II.Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)

Chih-Tang Sah; Bin B.Jie

Chin. J. Semicond. > 2007, Volume 28 > Issue 12 > 1849-1859

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The Bipolar Field-Effect Transistor:II.Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)

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Abstract: This paper describes the drift-diffusion theory of the bipolar field-effect transistor (BiFET) with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin-pure-base.Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric surface-electric-potential.Total and component output and transfer currents and conductances versus D.C.voltages from the drift-diffusion theory,and their deviations from the electrochemical (quasi-Fermi) potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contribution from the longitudinal gradient of the square of the transverse electric field is shown.

Key words: bipolar field-effect transistor theory, MOS field-effect transistor, simultaneous electron and hole surface and volume channels, surface potential, longitudinal gradient of transverse electric field, 横向电场的纵向梯度

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Chih-Tang Sah, Bin B.Jie. The Bipolar Field-Effect Transistor:II.Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)[J]. Journal of Semiconductors, 2007, 28(12): 1849-1859.

Chih-Tang S, Bin B.Jie. The Bipolar Field-Effect Transistor:II.Drift-Diffusion Current Theory(Two-MOS-Gates on Pure-Base)[J]. Chin. J. Semicond., 2007, 28(12): 1849.

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Received: 18 August 2015 Revised: Online: Published: 01 December 2007

This paper describes the drift-diffusion theory of the bipolar field-effect transistor (BiFET) with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin-pure-base.Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric surface-electric-potential.Total and component output and transfer currents and conductances versus D.C.voltages from the drift-diffusion theory,and their deviations from the electrochemical (quasi-Fermi) potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contribution from the longitudinal gradient of the square of the transverse electric field is shown.

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