In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz

Liu Liang; Zhang Haiying; Yin Junjian; Li Xiao; Yang Hao; Xu Jingbo; Song Yuzhu; Zhang Jian; Niu Jiebin; Liu Xunchun

Article Navigation > Journal of Semiconductors > 2007 > 28(12): 1860-1863

Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Yang Hao, Xu Jingbo, Song Yuzhu, Zhang Jian, Niu Jiebin, Liu Xunchun. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Journal of Semiconductors, 2007, 28(12): 1860-1863. ****Liu L, Zhang H Y, Yin J J, Li X, Yang H, Xu J B, Song Y Z, Zhang J, Niu J B, Liu X C. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Chin. J. Semicond., 2007, 28(12): 1860.

Citation:

Liu L, Zhang H Y, Yin J J, Li X, Yang H, Xu J B, Song Y Z, Zhang J, Niu J B, Liu X C. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Chin. J. Semicond., 2007, 28(12): 1860.

Citation:

Liu L, Zhang H Y, Yin J J, Li X, Yang H, Xu J B, Song Y Z, Zhang J, Niu J B, Liu X C. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Chin. J. Semicond., 2007, 28(12): 1860.

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In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz

Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

Received Date: 2015-08-18
Accepted Date: 2007-06-12
Revised Date: 2007-06-12
Published Date: 2007-11-28

Abstract

Abstract

By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency (fmax) of 183GHz was fabricated.Thefmax is the highest value for HEMTs in China.Also,the devices are reported,including the device structure,the fabrication process,and the DC and RF performances.
- maximum oscillation frequency/power-gain cutoff frequency,
- high electron mobility transistor,
- InGaAs/InAlAs,
- InP

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