LETTERS
Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Yang Hao, Xu Jingbo, Song Yuzhu, Zhang Jian, Niu Jiebin and Liu Xunchun
Abstract: By epitaxial layer structure design and key fabrication process optimization,a lattice-matched InP-based In0.53Ga0.47As-In0.52Al0.48As HEMT with an ultra high maximum oscillation frequency (fmax) of 183GHz was fabricated.Thefmax is the highest value for HEMTs in China.Also,the devices are reported,including the device structure,the fabrication process,and the DC and RF performances.
Key words: maximum oscillation frequency/power-gain cutoff frequency, high electron mobility transistor, InGaAs/InAlAs, InP
| 1 |
S. Theodore Chandra, N. B. Balamurugan, M. Bhuvaneswari, N. Anbuselvan, N. Mohankumar, et al. Journal of Semiconductors, 2015, 36(6): 064003. doi: 10.1088/1674-4926/36/6/064003 |
| 2 |
An 88 nm gate-length In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fmax of 201 GHz Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, Jin Zhi, et al. Journal of Semiconductors, 2012, 33(7): 074004. doi: 10.1088/1674-4926/33/7/074004 |
| 3 |
An InP-based heterodimensional Schottky diode for terahertz detection Wen Ruming, Sun Hao, Teng Teng, Li Lingyun, Sun Xiaowei, et al. Journal of Semiconductors, 2012, 33(10): 104001. doi: 10.1088/1674-4926/33/10/104001 |
| 4 |
Cheng Wei, Zhao Yan, Gao Hanchao, Chen Chen, Yang Naibin, et al. Journal of Semiconductors, 2012, 33(1): 014004. doi: 10.1088/1674-4926/33/1/014004 |
| 5 |
Ultra high-speed InP/InGaAs SHBTs with ft and fmax of 185 GHz Zhou Lei, Jin Zhi, Su Yongbo, Wang Xiantai, Chang Hudong, et al. Journal of Semiconductors, 2010, 31(9): 094007. doi: 10.1088/1674-4926/31/9/094007 |
| 6 |
Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAsInP-based HEMT Huang Jie, Guo Tianyi, Zhang Haiying, Xu Jingbo, Fu Xiaojun, et al. Journal of Semiconductors, 2010, 31(9): 094008. doi: 10.1088/1674-4926/31/9/094008 |
| 7 |
Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai, et al. Journal of Semiconductors, 2008, 29(3): 414-417. |
| 8 |
A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz Jin Zhi, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming, et al. Journal of Semiconductors, 2008, 29(10): 1898-1901. |
| 9 |
Fabrication of a High-Performance RTD on InP Substrate Qi Haitao, Feng Zhen, Li Yali, Zhang Xiongwen, Shang Yaohui, et al. Chinese Journal of Semiconductors , 2007, 28(12): 1945-1948. |
| 10 |
Agilent HBT Model Parameters Extraction Procedure For InP HBT’ He Jia, Sun Lingling, Liu Jun Chinese Journal of Semiconductors , 2007, 28(S1): 443-447. |
| 11 |
Surface Damage and Removal of Ar+ Etched InGaAs,n-InP and p-InP Lü Yanqiu, Yue Fangyu, Hong Xuekun, Chen Jiangfeng, Han Bing, et al. Chinese Journal of Semiconductors , 2007, 28(1): 122-126. |
| 12 |
Qi Ming, Xu Anhuai, Ai Likun, Sun Hao, Zhu Fuying, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 182-185. |
| 13 |
A New Method for InGaAs/InP Composite ChannelHEMTs Simulation Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, et al. Chinese Journal of Semiconductors , 2007, 28(11): 1706-1711. |
| 14 |
InP/InGaAs Heterojunction Bipolar Transistor with Base μ-Bridge and Emitter Air-Bridge Yu Jinyong, Liu Xinyu, Su Shubing, Wang Runmei, Xu Anhuai, et al. Chinese Journal of Semiconductors , 2007, 28(2): 154-158. |
| 15 |
Growth Modes of InP Epilayers Grown by Solid Source Molecular Beam Epitaxy Pi Biao, Shu Yongchun, Lin Yaowang, Xu Bo, Yao Jianghong, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 28-32. |
| 16 |
Semi-Insulating Long InP Single Crystal Growth Sun Niefeng, Mao Luhong, Guo Weilian, Zhou Xiaolong, Yang Ruixia, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 186-189. |
| 17 |
Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, et al. Chinese Journal of Semiconductors , 2007, 28(12): 1864-1867. |
| 18 |
Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP Miao Shanshan, Zhao Youwen, Dong Zhiyuan, Deng Aihong, Yang Jun, et al. Chinese Journal of Semiconductors , 2006, 27(11): 1934-1939. |
| 19 |
Synthesis and Spectral Properties of InP Colloidal Quantum Dots Zhang Daoli, Zhang Jianbing, Wu Qiming, Yuan Lin, Chen Sheng, et al. Chinese Journal of Semiconductors , 2006, 27(7): 1213-1216. |
| 20 |
Design and Process for Self-Aligned InP/InGaAs SHBT Structure Li Xianjie, Cai Daomin, Zhao Yonglin, Wang Quanshu, Zhou Zhou, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 136-139. |
Article views: 3331 Times PDF downloads: 1045 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 12 June 2007 Online: Published: 01 December 2007
| Citation: |
Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Yang Hao, Xu Jingbo, Song Yuzhu, Zhang Jian, Niu Jiebin, Liu Xunchun. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Journal of Semiconductors, 2007, 28(12): 1860-1863.
****
Liu L, Zhang H Y, Yin J J, Li X, Yang H, Xu J B, Song Y Z, Zhang J, Niu J B, Liu X C. In0.53Ga0.47As/In0.52Al0.48As HEMTs with fmax of 183GHz[J]. Chin. J. Semicond., 2007, 28(12): 1860.
|
WeChat ID
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2
DownLoad: