| Citation: |
Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, Song Yuzhu, Niu Jiebin, Liu Xunchun. Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency[J]. Journal of Semiconductors, 2007, 28(12): 1864-1867.
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Liu L, Zhang H Y, Yin J J, Li X, Xu J B, Song Y Z, Niu J B, Liu X C. Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency[J]. Chin. J. Semicond., 2007, 28(12): 1864.
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Ultrahigh-Speed Lattice-Matched In0.53Ga0.47As/In0.52Al0.48A HEMTs with 218GHz Cutoff Frequency
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Abstract
Lattice-matched In0.53Ga0.47As/In0.52Al0.48A high electron mobility transistors (HEMTs) with a cutoff frequency (fT) as high as 218GHz are reported.This fT is the highest value ever reported for HEMTs in China.These devices also demonstrate excellent DC characteristics:the extrinsic transconductance is 980mS/mm and the maximum current density is 870mA/mm.The material structure and all the device fabrication technology in this work were developed by our group. -
References
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