| Citation: |
Shao Lexi, Fu Yujun, Zhang Jun, He Deyan. Electrical and Optical Properties of Cu2 ZnSnS4 Thin Films Prepared for Solar Cell Absorber[J]. Journal of Semiconductors, 2007, 28(S1): 337-340.
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Shao L X, Fu Y J, Zhang J, He D Y. Electrical and Optical Properties of Cu2 ZnSnS4 Thin Films Prepared for Solar Cell Absorber[J]. Chin. J. Semicond., 2007, 28(S1): 337.
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Electrical and Optical Properties of Cu2 ZnSnS4 Thin Films Prepared for Solar Cell Absorber
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Abstract
CU2 ZnSnS4(CZTS)thin films were successfully prepared by sulfurization of vacuum evaporating Cu/Sn/ZnS pre. cursors on soda-lime glass SUbstrate.The crystallographic structures of the samples were determined by X.ray diffractometer. The electrical and optical properties were analyzed by Hall measurement and UV.VIS spectrophotometer.The influence of the predicted atomic ratio on electrical and optical properties of CZTS thin films was discussed.The single phase stannite. type structure CZTS thin films possesses the absorption coefficient more than 104 cm-1，band gap energy of about 1.51eV。 lOW electrical resistivity and high mobility。SO this thin film is suitable to the use as the absorber in thin film solar cells.-
Keywords:
- Cuz ZnSnS4,
- vacuum evaporation,
- sulfurization,
- solar cell
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References
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Proportional views
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