| Citation: |
Jin Fei, Zhang Weijia, Jia Shiliang, Ding Zhaochong, Yan Lanqin, Wang Tianmin, Li Guohua. Monotonous Linearity Varying Stratified Nanocrystalline Silicon Films and as p-i-n Layer in Thin Film Solar Cells[J]. Journal of Semiconductors, 2007, 28(S1): 333-336.
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Jin F, Zhang W J, Jia S L, Ding Z C, Yan L Q, Wang T M, Li G H. Monotonous Linearity Varying Stratified Nanocrystalline Silicon Films and as p-i-n Layer in Thin Film Solar Cells[J]. Chin. J. Semicond., 2007, 28(S1): 333.
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Monotonous Linearity Varying Stratified Nanocrystalline Silicon Films and as p-i-n Layer in Thin Film Solar Cells
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Abstract
Phosphorus.doped nanocrystalline silicon films(n+-nc-Si：H)，boron-doped nanocrystalline silicon films(P+.nc.Si： H)and intrinsic nanocrystalline silicn films(nc-Si：H)are prepared through plasma enhanced chemical vapor deposition (PECVD)，and the monotonous linearity varying stratified nanocrvstalline silicon films are also prepared.The films’struc. ture and surface topography are measured with Raman spectrum，X-ray diffraction(XRD)and ultraviolet.visible.near.infra. red band spectral photometer.The results show that the crystalline composition and the grain size of the nanocrvstanine sili. con films are influenced by the doped chemical element；three diffraction peaks of the crystal plane(111)，(220)，and (311) are found through the X-ray diffraction of the film surface；the solar cell with the monotonous linearity varying stratified nanocrystalline silicon films were prepared，and the solar cell’S structure iS A1/ITO/n+.nc.Si：H/i-nc.Si：H/p-c.Si/Al/Ag. And its performances are measured，the open-circuit voltage，short·circuit current and the fill factor are improved more large. 1y than the amorphous silicon solar eell ever before. -
References
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