Chin. J. Semicond. > 2004, Volume 25 > Issue 2 > 227-231
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多晶硅注氮制备4.6nm超薄栅介质

谭静荣 , 许晓燕 , 黄如 , 程行之 and 张兴

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Key words: 注氮, 应力诱生泄漏电流, 电介质击穿

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(2): 227-231
      谭静荣, 许晓燕, 黄如, 程行之, 张兴. 多晶硅注氮制备4.6nm超薄栅介质[J]. 半导体学报(英文版), 2004, 25(2): 227-231.
      Citation:
      谭静荣, 许晓燕, 黄如, 程行之, 张兴. 多晶硅注氮制备4.6nm超薄栅介质[J]. 半导体学报(英文版), 2004, 25(2): 227-231.
      shu

      • Received Date: 2015-08-19

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