Chin. J. Semicond. > 1987, Volume 8 > Issue 6 > 585-596
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适用于VLSI CAD的非均匀掺杂小尺寸MOSFET阈值电压模型

王建伟 and 阮刚

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(6): 585-596
      王建伟, 阮刚. 适用于VLSI CAD的非均匀掺杂小尺寸MOSFET阈值电压模型[J]. 半导体学报(英文版), 1987, 8(6): 585-596.
      Citation:
      王建伟, 阮刚. 适用于VLSI CAD的非均匀掺杂小尺寸MOSFET阈值电压模型[J]. 半导体学报(英文版), 1987, 8(6): 585-596.
      shu

      • Received Date: 2015-08-19

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