Chin. J. Semicond. > 1987, Volume 8 > Issue 6 > 597-603
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漏轻掺杂MOSFET的特性分析及其解析模型

谢连生 , 陈学良 and 徐元森

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(6): 597-603
      谢连生, 陈学良, 徐元森. 漏轻掺杂MOSFET的特性分析及其解析模型[J]. 半导体学报(英文版), 1987, 8(6): 597-603.
      Citation:
      谢连生, 陈学良, 徐元森. 漏轻掺杂MOSFET的特性分析及其解析模型[J]. 半导体学报(英文版), 1987, 8(6): 597-603.
      shu

      • Received Date: 2015-08-19

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