Chin. J. Semicond. > 2001, Volume 22 > Issue 1 > 74-79
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发射极-基极-发射极结构PNP型AlGaAs/GaAsHBT电流增益的理论分析

严北平 , 张鹤鸣 and 戴显英

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Key words: HBT, 解析模型

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(1): 74-79
      严北平, 张鹤鸣, 戴显英. 发射极-基极-发射极结构PNP型AlGaAs/GaAsHBT电流增益的理论分析[J]. 半导体学报(英文版), 2001, 22(1): 74-79.
      Citation:
      严北平, 张鹤鸣, 戴显英. 发射极-基极-发射极结构PNP型AlGaAs/GaAsHBT电流增益的理论分析[J]. 半导体学报(英文版), 2001, 22(1): 74-79.
      shu

      • Received Date: 2015-08-19

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