Chin. J. Semicond. > 1999, Volume 20 > Issue 9 > 780-785
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氮生长掺杂和离子注入掺杂CVD金刚石薄膜的场电子发射

邵乐喜 , 谢二庆 , 路永刚 , 贺德衍 and 陈光华

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(9): 780-785
      邵乐喜, 谢二庆, 路永刚, 贺德衍, 陈光华. 氮生长掺杂和离子注入掺杂CVD金刚石薄膜的场电子发射[J]. 半导体学报(英文版), 1999, 20(9): 780-785.
      Citation:
      邵乐喜, 谢二庆, 路永刚, 贺德衍, 陈光华. 氮生长掺杂和离子注入掺杂CVD金刚石薄膜的场电子发射[J]. 半导体学报(英文版), 1999, 20(9): 780-785.
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      • Received Date: 2015-08-19

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