Chin. J. Semicond. > 1999, Volume 20 > Issue 9 > 776-779
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LDMOS晶体管新型器件结构的耐压分析

唐本奇 , 罗晋生 , 耿斌 and 李国政

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(9): 776-779
      唐本奇, 罗晋生, 耿斌, 李国政. LDMOS晶体管新型器件结构的耐压分析[J]. 半导体学报(英文版), 1999, 20(9): 776-779.
      Citation:
      唐本奇, 罗晋生, 耿斌, 李国政. LDMOS晶体管新型器件结构的耐压分析[J]. 半导体学报(英文版), 1999, 20(9): 776-779.
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      • Received Date: 2015-08-19

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