Chin. J. Semicond. > 1999, Volume 20 > Issue 9 > 776-779
|

CONTENTS

LDMOS晶体管新型器件结构的耐压分析

唐本奇 , 罗晋生 , 耿斌 and 李国政

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2657 Times PDF downloads: 2053 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 September 1999

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1999  >  20(9): 776-779
      唐本奇, 罗晋生, 耿斌, 李国政. LDMOS晶体管新型器件结构的耐压分析[J]. 半导体学报(英文版), 1999, 20(9): 776-779.
      Citation:
      唐本奇, 罗晋生, 耿斌, 李国政. LDMOS晶体管新型器件结构的耐压分析[J]. 半导体学报(英文版), 1999, 20(9): 776-779.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return