| Citation: |
Hu Yanlong, Liang Huilai, Li Yihuan, Zhang Shilin, Mao Luhong, Guo Weilian. Monolithically Fabricated OEICs Using RTD and MSM[J]. Journal of Semiconductors, 2006, 27(4): 641-645.
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Hu Y L, Liang H L, Li Y H, Zhang S L, Mao L H, Guo W L. Monolithically Fabricated OEICs Using RTD and MSM[J]. Chin. J. Semicond., 2006, 27(4): 641.
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Monolithically Fabricated OEICs Using RTD and MSM
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Abstract
Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes(RTD) and metal-semiconductor-metal photo detectors(MSM PD).The electronic char-acteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature.The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes.The working theory and logical functions of the circuits are validated. -
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