Chin. J. Semicond. > 2004, Volume 25 > Issue 7 > 814-818
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具有复合埋层的新型SIMON材料的制备

易万兵 , 陈猛 , 张恩霞 , 刘相华 , 陈静 , 董业民 , 金波 , 刘忠立 and 王曦

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Key words: SIMON, SOI, 氮氧共注入

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(7): 814-818
      易万兵, 陈猛, 张恩霞, 刘相华, 陈静, 董业民, 金波, 刘忠立, 王曦. 具有复合埋层的新型SIMON材料的制备[J]. 半导体学报(英文版), 2004, 25(7): 814-818.
      Citation:
      易万兵, 陈猛, 张恩霞, 刘相华, 陈静, 董业民, 金波, 刘忠立, 王曦. 具有复合埋层的新型SIMON材料的制备[J]. 半导体学报(英文版), 2004, 25(7): 814-818.
      shu

      • Received Date: 2015-08-19

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