Chin. J. Semicond. > 2005, Volume 26 > Issue 5 > 941-946
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利用p型（100）硅片制备二维光子晶体的工艺

张晚云 , 季家榕 , 袁晓东 , 叶卫民 and 朱志宏

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Key words: 大孔硅, 光子晶体, 光子禁带, 制备, 碱性腐蚀, 电化学腐蚀

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(5): 941-946
      张晚云, 季家榕, 袁晓东, 叶卫民, 朱志宏. 利用p型（100）硅片制备二维光子晶体的工艺[J]. 半导体学报(英文版), 2005, 26(5): 941-946.
      Citation:
      张晚云, 季家榕, 袁晓东, 叶卫民, 朱志宏. 利用p型（100）硅片制备二维光子晶体的工艺[J]. 半导体学报(英文版), 2005, 26(5): 941-946.
      shu

      • Received Date: 2015-08-19

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