Chin. J. Semicond. > 1997, Volume 18 > Issue 3 > 218-222
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适用于0.8μmCMOS VLSI的双层金属布线技术研究

徐秋霞 , 海潮和 , 陈焕章 , 赵玉印 and 李建勋

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(3): 218-222
      徐秋霞, 海潮和, 陈焕章, 赵玉印, 李建勋. 适用于0.8μmCMOS VLSI的双层金属布线技术研究[J]. 半导体学报(英文版), 1997, 18(3): 218-222.
      Citation:
      徐秋霞, 海潮和, 陈焕章, 赵玉印, 李建勋. 适用于0.8μmCMOS VLSI的双层金属布线技术研究[J]. 半导体学报(英文版), 1997, 18(3): 218-222.
      shu

      • Received Date: 2015-08-19

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