An AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films

Chen Jinhuo; Hu Jiaxing; Zhang Fujia; Zhu Haihua; Wang Yongshun

Chin. J. Semicond. > 2006, Volume 27 > Issue 8 >

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An AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films

Chen Jinhuo, Hu Jiaxing, Zhang Fujia, Zhu Haihua and Wang Yongshun

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Abstract: In this paper, the sample of CuPc/SiO2 was fabricated. Its morphology was characterized by atomic force microscopy (AFM) and the electron states were investigated by X-ray photoelectron spectroscopy (XPS), respectively. In order to investigate on these spectra in detail, all of these spectra were normalized to the peak height of the most intense peak, and each component was fitted with a single Gaussian function. Analyzed results showed that O element had great bearing on the electron states, and SiO2 layer produced by spurting technology has advantage than that by oxidation technology.

Key words: CuPc/SiO2, X-ray photoelectronspectroscopy (XPS), Surface and interface analysis

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Chen Jinhuo, Hu Jiaxing, Zhang Fujia, Zhu Haihua, Wang Yongshun. An AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films[J]. Journal of Semiconductors, 2006, 27(8).

Chen J H, Hu J X, Zhang F J, Zhu H H, Wang Y S. An AFM and XPS Study on the Surface and Interface States of CuPc and SiO2 Films[J]. Chin. J. Semicond., 2006, 27(8): null.

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Received: 18 August 2015 Revised: 06 April 2006 Online: Published: 01 August 2006

In this paper, the sample of CuPc/SiO2 was fabricated. Its morphology was characterized by atomic force microscopy (AFM) and the electron states were investigated by X-ray photoelectron spectroscopy (XPS), respectively. In order to investigate on these spectra in detail, all of these spectra were normalized to the peak height of the most intense peak, and each component was fitted with a single Gaussian function. Analyzed results showed that O element had great bearing on the electron states, and SiO2 layer produced by spurting technology has advantage than that by oxidation technology.

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