Chin. J. Semicond. > 1996, Volume 17 > Issue 8 > 583-588
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GaAs、Al_xGa_（1－x）As外延层少子扩散长度及霍耳迁移率的无接触测

王宗欣，褚幼令

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    Received: 18 August 2015 Revised: Online: Published: 01 August 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(8): 583-588
      王宗欣，褚幼令. GaAs、Al_xGa_（1－x）As外延层少子扩散长度及霍耳迁移率的无接触测[J]. 半导体学报(英文版), 1996, 17(8): 583-588.
      Citation:
      王宗欣，褚幼令. GaAs、Al_xGa_（1－x）As外延层少子扩散长度及霍耳迁移率的无接触测[J]. 半导体学报(英文版), 1996, 17(8): 583-588.
      shu

      • Received Date: 2015-08-18

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