Chin. J. Semicond. > 2007, Volume 28 > Issue 5 > 778-782
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Structural Design and Testing of Silicon-Based PZT Thin Film Micro-Sensors

Lou Lifei, Yang Yintang, Li Yuejin and Zhang Ping

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Abstract: The structural and territorial design of PZT thin film micro-sensors is processed.Using MEMS processes and standard silicon-based IC,the key techniques and technical conditions are obtained for PZT thin film micro-cantilever beams based on silicon.At the same time,the preparation and micro-pattern etching techniques of PZT thin films are investigated by experiment.Finally,a PZT thin film micro-sensor is successfully etched and the experimental foundations are laid for the research and development of the system on a chip.

Key words: lead zirconate titanate, piezoelectric thin film, micro-sensor, wet chemical etching

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    Received: 18 August 2015 Revised: 05 January 2007 Online: Published: 01 May 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(5): 778-782
      Lou Lifei, Yang Yintang, Li Yuejin, Zhang Ping. Structural Design and Testing of Silicon-Based PZT Thin Film Micro-Sensors[J]. Journal of Semiconductors, 2007, 28(5): 778-782. ****Lou L F, Yang Y T, Li Y J, Zhang P. Structural Design and Testing of Silicon-Based PZT Thin Film Micro-Sensors[J]. Chin. J. Semicond., 2007, 28(5): 778.
      Citation:
      Lou Lifei, Yang Yintang, Li Yuejin, Zhang Ping. Structural Design and Testing of Silicon-Based PZT Thin Film Micro-Sensors[J]. Journal of Semiconductors, 2007, 28(5): 778-782. ****
      Lou L F, Yang Y T, Li Y J, Zhang P. Structural Design and Testing of Silicon-Based PZT Thin Film Micro-Sensors[J]. Chin. J. Semicond., 2007, 28(5): 778.
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      Structural Design and Testing of Silicon-Based PZT Thin Film Micro-Sensors

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi’an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi’an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi’an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Institute of Microelectronics,Xidian University,Xi’an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-30
      • Revised Date: 2007-01-05
      • Published Date: 2007-04-29

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