| Citation: |
Wang Yuan, Chen Zhongjian, Jia Song, Lu Wengao, Fu Yiling, Ji Lijiu. Novel Electrostatic Discharge Protection Design Method[J]. Journal of Semiconductors, 2007, 28(7): 1156-1160.
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Wang Y, Chen Z J, Jia S, Lu W G, Fu Y L, Ji L J. Novel Electrostatic Discharge Protection Design Method[J]. Chin. J. Semicond., 2007, 28(7): 1156.
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Novel Electrostatic Discharge Protection Design Method
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Abstract
A novel ESD protection design method is proposed instead of the traditional experience-based trial-and-error electrostatic discharge (ESD) design approach.The new method resolves the costly and time-consuming problems of high-performance ESD protection development in sub/deep-sub micron CMOS technology.The method is conducted and verified in a 0.5μm CMOS process to accomplish I/O cell design of a CMOS ASIC library,whose human-body-model ESD level can be greater than 5kV. -
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