Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 542-546
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一种高性能CMOS带隙电压基准源设计

朱樟明 , 杨银堂 , 刘帘曦 and 朱磊

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Key words: CMOS, 带隙电压基准源, 二次分压, 温度补偿

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 542-546
      朱樟明, 杨银堂, 刘帘曦, 朱磊. 一种高性能CMOS带隙电压基准源设计[J]. 半导体学报(英文版), 2004, 25(5): 542-546.
      Citation:
      朱樟明, 杨银堂, 刘帘曦, 朱磊. 一种高性能CMOS带隙电压基准源设计[J]. 半导体学报(英文版), 2004, 25(5): 542-546.
      shu

      • Received Date: 2015-08-19

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