Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 535-541
|

CONTENTS

垂直布里奇曼法生长CdZnTe晶体时固液界面形状的控制

李万万 , 桑文斌 , 闵嘉华 , 郁芳 , 张斌 , 王昆黍 and 曹泽淳

+ Author Affiliations

PDF

Key words: CdZnTe, 垂直布里奇曼法, 有限元法

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2549 Times PDF downloads: 884 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 535-541
      李万万, 桑文斌, 闵嘉华, 郁芳, 张斌, 王昆黍, 曹泽淳. 垂直布里奇曼法生长CdZnTe晶体时固液界面形状的控制[J]. 半导体学报(英文版), 2004, 25(5): 535-541.
      Citation:
      李万万, 桑文斌, 闵嘉华, 郁芳, 张斌, 王昆黍, 曹泽淳. 垂直布里奇曼法生长CdZnTe晶体时固液界面形状的控制[J]. 半导体学报(英文版), 2004, 25(5): 535-541.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return