Chen Gang, Bai Song, Zhang Tao, Wang Hao, Li Zheyang and Jiang Youquan
Abstract: We report the key devico process of 4H-SiC MESFET.We fabricate n-channel 4H-SiC MESFETs with lmm total gate periphery with a device process designed by US.The RF characteristics are studied. At，fo=2GHz and Vds=64V，the maximum output power is measured to be 4.1W，and the gain of small signal exceeds 10dB.
Key words: 4H-SiC, MESFET, microwave, wide band semiconductor
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Received: 27 May 2016 Revised: Online: Published: 01 January 2007
| Citation: |
Chen Gang, Bai Song, Zhang Tao, Wang Hao, Li Zheyang, Jiang Youquan. 4H-SiC MESFET Device Process[J]. Journal of Semiconductors, 2007, 28(S1): 565-567.
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Chen G, Bai S, Zhang T, Wang H, Li Z Y, Jiang Y Q. 4H-SiC MESFET Device Process[J]. Chin. J. Semicond., 2007, 28(S1): 565.
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