Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 568-571

Challenges and Solution of Fabrication Techniques for Silicon-Based NanD-Photonics Devices。

Chen Shaowu, Tu Xiaoguang, Yu Hejun, Fan Zhongchao, Xu Xuejun and Yu Jinzhong

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Abstract: This paper deals with several key fabrication techniques for silicon-based nano-photonics devices·including correction of optical proximity effect(OPE)of deep UV lithography and proximity effect of e-beam lithography(EBL).reduction of side wall roughness of silicon nanowire waveguide fabricated by ICP-RIE technique,compactness of silicon dioxide CVD filling for DBR grating grooves and MOS isolation gates.Based on the experimental results,some solutions were proposed and discussed.

Key words: silicon-·based nano-photonicsoptical proximity/e··beam lithography proximity effectICP-RIEside wall roughness of silicon nanowire waveguideCVD

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    Wu Ju, Wang Zhanguo. InAs Wires on InP (001)[J]. Journal of Semiconductors, 2006, 27(2): 197-203.
    Wu J, Wang Z G. InAs Wires on InP (001)[J]. Chin. J. Semicond., 2006, 27(2): 197.
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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Wu Ju, Wang Zhanguo. InAs Wires on InP (001)[J]. Journal of Semiconductors, 2006, 27(2): 197-203. ****Wu J, Wang Z G. InAs Wires on InP (001)[J]. Chin. J. Semicond., 2006, 27(2): 197.
      Citation:
      Chen Shaowu, Tu Xiaoguang, Yu Hejun, Fan Zhongchao, Xu Xuejun, Yu Jinzhong. Challenges and Solution of Fabrication Techniques for Silicon-Based NanD-Photonics Devices。[J]. Journal of Semiconductors, 2007, 28(S1): 568-571. ****
      Chen S W, Tu X G, Yu H J, Fan Z C, Xu X J, Yu J Z. Challenges and Solution of Fabrication Techniques for Silicon-Based NanD-Photonics Devices。[J]. Chin. J. Semicond., 2007, 28(S1): 568.

      Challenges and Solution of Fabrication Techniques for Silicon-Based NanD-Photonics Devices。

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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