| Citation: |
Zhou Jianwei, Liu Yuling, Zhang Wei. Study of CMP Lapping Technique of ULSI Silicon Substrate[J]. Journal of Semiconductors, 2007, 28(S1): 572-573.
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Zhou J W, Liu Y L, Zhang W. Study of CMP Lapping Technique of ULSI Silicon Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 572.
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Study of CMP Lapping Technique of ULSI Silicon Substrate
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Abstract
By the analysis to the traditional wafer lapping process，the main factors which effect the wafer's surface quality are concluded，then a new method which apply CMP technique into ULSI silicon substrate lapping process is brought up.This method's purpose is to reduce intense，simplex mechanical effect and increase chemistry.The result is verified by experiment that the rate is increased by 20％，moreover，the surface roughness and damage are reduced effectively.-
Keywords:
- silicon waferI CMP,
- surfactant,
- lapping-rate,
- roughness
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References
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Proportional views
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