| Citation: |
Lu Yangfan, Ye Zhizhen, Zeng Yujia, Xu Weizhong, Zhu Liping, Zhao Binghui. Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD[J]. Journal of Semiconductors, 2007, 28(S1): 275-278.
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Lu Y F, Ye Z Z, Zeng Y J, Xu W Z, Zhu L P, Zhao B H. Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD[J]. Chin. J. Semicond., 2007, 28(S1): 275.
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Effects of Growth Parameters on Proprties of P-Type ZnO Films Grown by MOCVD
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Abstract
P-type N-ZnO thin films are grown by plasma-assisted metalorganic chemical vapor deposition(MOCVD).Effects of substrate temperature，RF power and flux of DEZn on properties of ZnO films are investigated.-
Keywords:
- ZnO,
- p-type doping,
- metalorganic chemical vapor deposition
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References
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Proportional views
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