| Citation: |
Pan Xinhua, Ye Zhizhen, Zhu Liping, Gu Xiuquan, He Haiping. Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD[J]. Journal of Semiconductors, 2007, 28(S1): 279-281.
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Pan X H, Ye Z Z, Zhu L P, Gu X Q, He H P. Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD[J]. Chin. J. Semicond., 2007, 28(S1): 279.
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Fabrication of Sb-Doped P-Type ZnO Thin Films by PLD
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Abstract
Antimony-doped p-type ZnO thin films were deposited on quartz substrates by pulsed laser deposition.X-ray diffraction shows that the films are highly(002)-oriented.X·ray photoelectron spectroscopy verifies that antimony(Sb)has been doped into ZnOthin films，and the core Sb occupies the Zn site but not the O site.Hall measurement shows that the best p-type ZnO film has a low resistivity of 2.21Ω·cm，a hole concentration of 2.30 x 10^18 cm-3 and a Hall mobility of 1.23cm2/(v·s).-
Keywords:
- pulsed laser deposition,
- P·type ZnO,
- antimony。doping
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References
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Proportional views
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