| Citation: |
Wang Wenyan, Qin Fuwen, Wu Aimin, Song Shiwei, Liu Ruixian, Jiang Xin, Xu Yin, Gu Biao. Influences of N2 Flow Rate on the Crystalline Characteristics of GaN Films Deposited on Glass Substrate at Low Temperature[J]. Journal of Semiconductors, 2008, 29(12): 2376-2380.
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Wang W Y, Qin F W, Wu A M, Song S W, Liu R X, Jiang X, Xu Y, Gu B. Influences of N2 Flow Rate on the Crystalline Characteristics of GaN Films Deposited on Glass Substrate at Low Temperature[J]. J. Semicond., 2008, 29(12): 2376.
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Influences of N2 Flow Rate on the Crystalline Characteristics of GaN Films Deposited on Glass Substrate at Low Temperature
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Abstract
High c-axis oriented GaN films have been deposited on corning 7101 glass substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) at low temperature.Influences of N2 flow rate on the crystalline characteristics of the GaN films were investigated by reflection high energy electron diffraction (RHEED) in situ and X-ray diffraction (XRD).And the surface morphology and the optical properties of the GaN film were studied using atomic force microscope (AFM) and room temperature photoluminescence (PL) spectra.The results show that the surface morphology of the GaN film is smooth and its optical peaks are composed of a stronger ultraviolet near band emission and a rather weak green emission.-
Keywords:
- ECR-PEMOCVD,
- GaN,
- low-temperature deposition,
- glass substrates
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References
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Proportional views
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