Citation: |
Shi Feng, Li Yuguo, Sun Qinjun. Analysis to Microstructure of CuO/SiO2 Composite Thin Films Annealing at Different Atmospheres[J]. Journal of Semiconductors, 2008, 29(12): 2381-2384.
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Shi F, Li Y G, Sun Q J. Analysis to Microstructure of CuO/SiO2 Composite Thin Films Annealing at Different Atmospheres[J]. J. Semicond., 2008, 29(12): 2381.
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Analysis to Microstructure of CuO/SiO2 Composite Thin Films Annealing at Different Atmospheres
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Abstract
Cu/SiO2 composite thin films were deposited on n-type Si (111) substrates using radio frequency (RF) magnetron co-sputtering method,annealed at high temperature in N2 and NH3 atmosphere,and then cooled and oxidated in the air to form CuO structure.Microstructure of the films was analyzed.The main phase of sample is cubic CuO(200) crystal face and nano-line structure forms with Cu,O elements as the main components to form CuO/SiO2 composite thin films in the sample surface after annealed at 1100℃ in N2 atmosphere.As the annealing temperature increases in NH3 atmosphere,the structure of CuO turns from monoclinic crystal phase to cubic phase and the crystal quality of CuO thin films improves.After annealed at 900 and 1100℃,ordered and scattered micro-particles are formed in samples,and the former is made up of granular clusters with rough surface while the latter is constituted by flake small particles with smooth surface. -
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