| Citation: |
Ren Chunjiang, Chen Tangsheng, Jiao Gang, Chen Gang, Xue Fangshi, Chen Chen. Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2008, 29(12): 2385-2388.
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Ren C J, Chen T S, Jiao G, Chen G, Xue F S, Chen C. Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs[J]. J. Semicond., 2008, 29(12): 2385.
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Effects of NF3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs
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Abstract
NF3 plasma surface treatment in inductively coupled plasma (ICP) system prior to SiN passivation on the characteristics of AlGaN/GaN HEMTs has been studied.The results show that current collapse is effectively suppressed while DC and RF performance is not affected for the AlGaN/GaN HEMTs with low power NF3 plasma treated.The AlGaN/GaN HEMT with 6 minutes NF3 plasma treated reaches a power density of 6.15W/mm at 2GHz and 30V operating voltage while the device without NF3 plasma treated only gets an output power density of 1.82W/mm.-
Keywords:
- AlGaN/GaN,
- HEMT,
- current collapse,
- NF3 plasma treatment
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References
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Proportional views
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