Chin. J. Semicond. > 1996, Volume 17 > Issue 4 > 300-304
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SIMOX材料隐埋氧化层中针孔密度的表征和形成机理定性分析

竺士炀，林成鲁

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    Received: 18 August 2015 Revised: Online: Published: 01 April 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(4): 300-304
      竺士炀，林成鲁. SIMOX材料隐埋氧化层中针孔密度的表征和形成机理定性分析[J]. 半导体学报(英文版), 1996, 17(4): 300-304.
      Citation:
      竺士炀，林成鲁. SIMOX材料隐埋氧化层中针孔密度的表征和形成机理定性分析[J]. 半导体学报(英文版), 1996, 17(4): 300-304.
      shu

      • Received Date: 2015-08-18

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