Chin. J. Semicond. > 1994, Volume 15 > Issue 9 > 596-602
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布里兹曼法碲镉汞（Hg1－xCdxTe）晶体生长过程热场的数值分析

王培林，魏科，周士仁

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(9): 596-602
      王培林，魏科，周士仁. 布里兹曼法碲镉汞（Hg1－xCdxTe）晶体生长过程热场的数值分析[J]. 半导体学报(英文版), 1994, 15(9): 596-602.
      Citation:
      王培林，魏科，周士仁. 布里兹曼法碲镉汞（Hg1－xCdxTe）晶体生长过程热场的数值分析[J]. 半导体学报(英文版), 1994, 15(9): 596-602.
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      • Received Date: 2015-08-19

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