Chin. J. Semicond. > 1994, Volume 15 > Issue 9 > 603-610
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自对准Ti－SALICIDE　LDD　MOS工艺研究

徐秋霞，龚义元，张建欣，汪锁发，翦进，海潮和，扈焕章

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(9): 603-610
      徐秋霞，龚义元，张建欣，汪锁发，翦进，海潮和，扈焕章. 自对准Ti－SALICIDE　LDD　MOS工艺研究[J]. 半导体学报(英文版), 1994, 15(9): 603-610.
      Citation:
      徐秋霞，龚义元，张建欣，汪锁发，翦进，海潮和，扈焕章. 自对准Ti－SALICIDE　LDD　MOS工艺研究[J]. 半导体学报(英文版), 1994, 15(9): 603-610.
      shu

      • Received Date: 2015-08-19

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