Chin. J. Semicond. > 1994, Volume 15 > Issue 9 > 611-616
|

CONTENTS

为SIMOX　SOI结构的硅膜和二氧化硅埋层厚度模型

牛国富，阮刚

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2164 Times PDF downloads: 1111 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 September 1994

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1994  >  15(9): 611-616
      牛国富，阮刚. 为SIMOX　SOI结构的硅膜和二氧化硅埋层厚度模型[J]. 半导体学报(英文版), 1994, 15(9): 611-616.
      Citation:
      牛国富，阮刚. 为SIMOX　SOI结构的硅膜和二氧化硅埋层厚度模型[J]. 半导体学报(英文版), 1994, 15(9): 611-616.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return