Chin. J. Semicond. > 1994, Volume 15 > Issue 9 > 617-622
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高压编移栅P沟MOSFET的电离辐照性能研究

严荣良，高文钰，张国强，余学锋，罗来会，任迪远，赵元富，李荫波

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(9): 617-622
      严荣良，高文钰，张国强，余学锋，罗来会，任迪远，赵元富，李荫波. 高压编移栅P沟MOSFET的电离辐照性能研究[J]. 半导体学报(英文版), 1994, 15(9): 617-622.
      Citation:
      严荣良，高文钰，张国强，余学锋，罗来会，任迪远，赵元富，李荫波. 高压编移栅P沟MOSFET的电离辐照性能研究[J]. 半导体学报(英文版), 1994, 15(9): 617-622.
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      • Received Date: 2015-08-19

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