Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1310-1314
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衬底热空穴耦合的薄栅TDDB效应

刘红侠 , 郝跃 and 张进城

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Key words: 薄栅氧化层, 经时击穿, 衬底热空穴, 击穿电荷, 模型

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1310-1314
      刘红侠, 郝跃, 张进城. 衬底热空穴耦合的薄栅TDDB效应[J]. 半导体学报(英文版), 2001, 22(10): 1310-1314.
      Citation:
      刘红侠, 郝跃, 张进城. 衬底热空穴耦合的薄栅TDDB效应[J]. 半导体学报(英文版), 2001, 22(10): 1310-1314.
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      • Received Date: 2015-08-20

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