Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 562-567
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施主型界面态引起深亚微米槽栅PMOS特性的退化

任红霞 , 张晓菊 and 郝跃

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Key words: 槽栅PMOSFET, 施主界面态密度, 栅极特性, 漏极电流驱动能力, 特性退化

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 562-567
      任红霞, 张晓菊, 郝跃. 施主型界面态引起深亚微米槽栅PMOS特性的退化[J]. 半导体学报(英文版), 2004, 25(5): 562-567.
      Citation:
      任红霞, 张晓菊, 郝跃. 施主型界面态引起深亚微米槽栅PMOS特性的退化[J]. 半导体学报(英文版), 2004, 25(5): 562-567.
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      • Received Date: 2015-08-19

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