Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 568-572
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薄栅氧高压CMOS器件研制

刘奎伟 , 韩郑生 , 钱鹤 , 陈则瑞 , 于洋 , 仙文岭 and 饶竞时

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Key words: 0.5μm, 高压CMOS, 高低压兼容, CMOS工艺, 驱动电路

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 568-572
      刘奎伟, 韩郑生, 钱鹤, 陈则瑞, 于洋, 仙文岭, 饶竞时. 薄栅氧高压CMOS器件研制[J]. 半导体学报(英文版), 2004, 25(5): 568-572.
      Citation:
      刘奎伟, 韩郑生, 钱鹤, 陈则瑞, 于洋, 仙文岭, 饶竞时. 薄栅氧高压CMOS器件研制[J]. 半导体学报(英文版), 2004, 25(5): 568-572.
      shu

      • Received Date: 2015-08-19

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