Structural Characteristics of ZnO Epilayer Grown on Si Substrates

Wang Kun; Yao Shude; Ding Zhibo; Zhu Junjie; Fu Zhuxi

Chin. J. Semicond. > 2006, Volume 27 > Issue 8 > 1386-1390

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Structural Characteristics of ZnO Epilayer Grown on Si Substrates

Wang Kun, Yao Shude, Ding Zhibo, Zhu Junjie and Fu Zhuxi

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Abstract: High-quality ZnO thin films are deposited on different Si substrates by double-connected low pressure metal-organic chemical vapor deposition (LP-MOCVD).Their composition and structural characteristics are characterized using Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD) technology.The sample with a SiC buffer layer on the Si(111) substrate has a smaller full-width at half maximum of XRD (0002) reflection,and the elastic strain of the c axis with a smaller value is changed from positive to negative.These results show that the SiC buffer layer can reduce the strain from the lattice mismatch between ZnO and the Si substrate and improve the quality of single-crystal ZnO films.

Key words: ZnO/SiC/Si, Rutherford backscattering/channeling, X-ray diffraction, structure properties

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Received: 20 August 2015 Revised: Online: Published: 01 August 2006

High-quality ZnO thin films are deposited on different Si substrates by double-connected low pressure metal-organic chemical vapor deposition (LP-MOCVD).Their composition and structural characteristics are characterized using Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD) technology.The sample with a SiC buffer layer on the Si(111) substrate has a smaller full-width at half maximum of XRD (0002) reflection,and the elastic strain of the c axis with a smaller value is changed from positive to negative.These results show that the SiC buffer layer can reduce the strain from the lattice mismatch between ZnO and the Si substrate and improve the quality of single-crystal ZnO films.

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