Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1596-1599

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氮化H_2-O_2合成薄栅氧抗辐照特性

刘新宇 , 刘运龙 , 孙海锋 , 海潮和 , 吴德馨 , 和致经 and 刘忠立

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Key words: 氮化H2-O2合成, 抗辐照, 快速热退火

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1596-1599
      刘新宇, 刘运龙, 孙海锋, 海潮和, 吴德馨, 和致经, 刘忠立. 氮化H_2-O_2合成薄栅氧抗辐照特性[J]. 半导体学报(英文版), 2001, 22(12): 1596-1599.
      Citation:
      刘新宇, 刘运龙, 孙海锋, 海潮和, 吴德馨, 和致经, 刘忠立. 氮化H_2-O_2合成薄栅氧抗辐照特性[J]. 半导体学报(英文版), 2001, 22(12): 1596-1599.
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      • Received Date: 2015-08-20

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